Tension: 500 V
Intensité: 8 A
Polarité: MOS-N-FET-e
Boîtier: TO220
IRF840APBF – MOSFET Transistor, N Channel, 8 A, 500 V, 850 mohm, 10 V, 4 V
400CFA
Tension: 500 V
Intensité: 8 A
Polarité: MOS-N-FET-e
Boîtier: TO220
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