COMPOSANT ELECTRONIQUE, transistor
IRF510
IRF510PBF – MOSFET Transistor, N Channel, 5.6 A, 100 V, 540 mohm, 10 V, 4 V
400CFA
Tension: 100 V
Intensité: 5,6 A
Polarité: MOS-N-FET-e
Boîtier: TO220
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